pracownik nieetatowy w IFD WF UW
tel. 22 55 32 748
e-mail Aliaksei.Bohdan@fuw.edu.pl<\/p>\n\n\n
pomieszczenie: 01.188<\/p>\n\n\n\n
Reaktor do wzrostu ALD, model TFS 200, firmy Beneq z zaprezentowan\u0105 komor\u0105 wzrostu o \u015brednicy 200 mm. <\/p>\n\n\n\n
ALD growth reactor, model TFS 200, delivered by Beneq with reactor chamber of 200 mm diameter shown.<\/p>\n\n\n\n Reaktor oferuje obecnie 6 linii prekursorowych do wzrostu wielu materia\u0142\u00f3w cienkowarstwowych. System pozwala na u\u017cycie prekursor\u00f3w zar\u00f3wno w stanie ciek\u0142ym (4 linie) jak i sta\u0142ym (2 linie podgrzewane). Przy jego u\u017cyciu w pracowni wzrastane s\u0105 tlenek glinu, tlenek cynku, tlenek hafnu, tlenek tytanu oraz ich zwi\u0105zki potr\u00f3jne lub nawet poczw\u00f3rne, takie jak domieszkowany glinem oraz hafnem tlenek cynku. Do dyspozycji w pracowni s\u0105 nast\u0119puj\u0105ce prekursory:<\/p>\n\n\n\n Reaktor umo\u017cliwia hodowl\u0119 w temperaturze do 500 \u00b0C oraz przy niskim ci\u015bnieniu, ok. 5 mbar. Komora reaktora ma \u015brednic\u0119 200 mm, co umo\u017cliwia hodowl\u0119 wielu pr\u00f3bek na raz. Dodatkowo, reaktor wyposa\u017cony jest w wag\u0119 kwarcow\u0105 do monitorowania wzrostu in-situ. Warstwy wzrastane technik\u0105 ALD charakteryzuj\u0105 si\u0119 du\u017c\u0105 precyzj\u0105 grubo\u015bci oraz kontroli sk\u0142adu materia\u0142u. Podczas hodowli reakcja wzrostu zachodzi warstwa po warstwie, daj\u0105c bardzo dobr\u0105 kontrol\u0119 and ostateczn\u0105 grubo\u015bci\u0105 otrzymanego materia\u0142u. Dodatkowo, mo\u017cliwe jest pokrywanie materia\u0142\u00f3w o wysokorozwini\u0119tej, skomplikowanej lub nanoporowatej powierzchni oraz struktur o wysokim aspect-ratio.<\/p>\n\n\n Zdj\u0119cia SEM tlenku cynku wyhodowanego na naszym uk\u0142adzie.<\/p>\n\n\n The reactor currently features 6 precursor lines for the growth of various thin-film materials. The system allows the use of precursors in both liquid state (4 lines) and solid state (2 heated lines). Using it in the laboratory various oxide materials are grown such as: aluminum oxide, zinc oxide, hafnium oxide, titanium oxide, and their triple or even quadruple compounds (for instance doped aluminum and hafnium zinc oxide). The following precursors are available in the laboratory:<\/p>\n The reactor allows growth at temperatures up to 500 \u00b0C and under low pressure, approximately 5 mbar. The reactor chamber has a diameter of 200 mm, enabling the deposition on multiple samples simultaneously. Additionally, the reactor is equipped with a quartz balance for in-situ growth monitoring. Layers grown using the ALD technique exhibit high thickness precision and control over material composition. During growth, the layer-by-layer reaction occurs, providing excellent control over the final thickness of the obtained material. Moreover, it is possible to coat materials with large, complicated or nanoporous surfaces and structures with a high aspect ratio.<\/p>\n\n\n ALD (ATOMIC LAYER DEPOSITION) Urz\u0105dzenie do osadzania warstw atomowych ALD (Atomic layer deposition). Pracownik odpowiedzialny: mgr Aliaksei Bohdanpracownik nieetatowy w IFD WF UWtel. 22 55 32 748e-mail Aliaksei.Bohdan@fuw.edu.pl pomieszczenie: 01.188 Reaktor do wzrostu ALD, model TFS 200, firmy Beneq z zaprezentowan\u0105 komor\u0105 wzrostu o \u015brednicy 200 mm. ALD growth reactor, model TFS 200, delivered by […]<\/p>",
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